| Alternative NSN: 5961-01-178-4330 |
| Item Name: Transistor |
| CAGE Code : 3B150 , 54X10 , 17856 |
| NIIN: 011784330 |
| FSC Name: 5961 Semiconductor Devices and Associated Hardware |
| NCB Code: USA (01) |
| Manufacturers: raytheon company , siliconix incorporated |
|
Part No Part No
|
Manufacturer |
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
|---|---|---|---|---|
| 2N3384 | raytheon company | transistor | Avl | |
| 267743 | raytheon company | transistor | Avl | |
| SU981 | siliconix incorporated | transistor | Avl |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.190 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 49956-267743 DRAWING THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC. EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
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